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| UNISONIC TECHNOLOGIES CO., LTD 2SC1384 NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC1384 is power amplifier and driver. NPN SILICON TRANSISTOR FEATURES * Low VCE(SAT) * 2~3W output in complementary pair with 2SA684 Lead-free: 2SC1384L Halogen-free: 2SC1384G ORDERING INFORMATION Normal 2SC1384-X-AB3-R 2SC1384-x-T9N-B 2SC1384-x-T9N-K 2SC1384-x-T9N-R Ordering Number Lead Free Plating 2SC1384L-x-AB3-R 2SC1384L-x-T9N-B 2SC1384L-x-T9N-K 2SC1384L-x-T9N-R Halogen-Free 2SC1384G-x-AB3-R 2SC1384G-x-T9N-B 2SC1384G-x-T9N-K 2SC1384G-x-T9N-R Package SOT-89 TO-92NL TO-92NL TO-92NL Pin Assignment Packing 1 2 3 B C E Tape Reel E C B Tape Box E C B Bulk E C B Tape Reel www.unisonic.com.tw Copyright (c) 2008 Unisonic Technologies Co., Ltd 1 of 5 QW-R211-005.C 2SC1384 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25, unless otherwise specified ) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Peak Collector Current ICP 1.5 A Collector Current (DC) IC 1 A Collector Dissipation (Ta=25) PC 1000 mW Junction Temperature TJ 125 Operating Temperature TOPR -20 ~ +85 Storage Temperature TSTG -40 ~ +150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Collector-Base Breakdown Voltage BVCBO IC=10A, IE=0 Collector-Emitter Breakdown Voltage BVCEO IC=2mA, IB=0 Emitter-Base Breakdown Voltage BVEBO IE=10A, IC=0 Collector Cut-Off Current ICBO VCB=20V, IE=0 hFE1 VCE=10V, IC=500mA DC Current Gain hFE2 VCE=5V, IB=1A Collector-Emitter Saturation Voltage VCE(SAT) IC=0.5A, IB=50mA Base-Emitter Saturation Voltage VBE(SAT) IC=0.5A, IB=50mA Current Gain Bandwidth Product fT VCE=10V, IB=50mA Output Capacitance Cob VCB=10V, IE=0, f=1MHz MIN 60 50 5 85 50 TYP MAX UNIT V V V A 160 100 0.2 0.85 200 11 0.1 340 0.4 1.2 20 V V MHz pF CLASSIFICATION OF hFE RANK RANGE Q 85-170 R 120-240 S 170-340 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 5 QW-R211-005.C 2SC1384 TYPICAL CHARACTERISTICS Collector Current, IC (A) Collector Power Dissipation, PC (W) UNISONIC TECHNOLOGIES CO., LTD Collector To Emitter Saturation Voltage, VCE(SAT) (V) Collector Current, IC (A) www.unisonic.com.tw NPN SILICON TRANSISTOR 3 of 5 QW-R211-005.C 2SC1384 TYPICAL CHARACTERISTICS(Cont.) Transition Frequency vs. Emitter Current NPN SILICON TRANSISTOR 200 50 45 40 35 30 25 20 15 10 Collector Output Capacitance vs. Collector to Base Voltage IE=0 F=1MHz Ta=25 180 VCB=10V Ta=25 160 140 120 100 80 60 40 20 0 -1 -3 -10 -30 Emitter Current, IE (mA) -100 5 0 3 10 30 100 1 Collector To Base Voltage, VCB (V) 120 100 80 60 40 20 Collector to Emitter Voltage vs. Base to Emitter Resistance IC=10mA Ta=25 104 Collector to Emitter Current vs. Ambient Temperature VCE=10V 103 102 10 0 1 3 10 30 0.1 0.3 100 Base To Emitter Resistance, RBE (K) 1 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta () Collector Current, IC (A) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 5 QW-R211-005.C 2SC1384 NPN SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R211-005.C |
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